|Institution:||University of Lund|
|Keywords:||Teknik och teknologier; III-V; MOSFET; Transistor|
|Full text PDF:||http://lup.lub.lu.se/record/bd0beb77-f687-476d-a7db-25bcc1d915d9;http://portal.research.lu.se/ws/files/23814249/CBZ_THESIS_20170410.pdf|
III-V compound semiconductors are used in, amongmany other things, high-frequency electronics. They are alsoconsidered as a replacement for silicon in CMOS technology. Yet, aIII-V transistor outperforming state-of-the-art silicon devices inVLSI-relevant metrics has not yet decisively been demonstrated. Inthis work, the limits of III-V FET performance, for both RF andVLSI applications, are explored experimentally.