AbstractsComputer Science

In this research project as a graduate thesis, a physics based analytical model has been developed to evaluate the I-V characteristics, transconductance and drain conductance of SiC based MESFET. This analytical model has been developed to determine the accurate value of drain current by incorporating three current equations for linear, non-linear and saturation regions. The gate length has been divided into three regions to incorporate the effect of charge sharing in the gate depletion region on the I-V characteristics. The transconductance shows a linear increase with increase of gate-source voltages range and the threshold voltage was found to be reasonable value agreeing well with the I-V characteristics. The drain conductance shows a large value in low drain-source voltage and becomes low at high drain-source voltage for all reasonable values of gate-source voltage range showing the modulation of the conductance under gate-source and drain-source biasing. The results on I-V characteristics extracted from this analytical model is valid for submicron gate length MESFET devices and this study is extremely valuable to design the SiC based MESFET device for extremely high power RF and high switching performance.