|Institution:||University of Illinois – Urbana-Champaign|
|Full text PDF:||http://hdl.handle.net/2142/29761|
Modulation of the plasma sheath in a plasma bipolar junction transistor (PBJT) is observed for base inputs of less than one volt. Using the recorded data, along with a collisional, high-voltage sheath model developed herein, a 359% increase in the secondary electron emission coefficient of the exposed silicon surface is inferred. Additionally, the pressure dependence of these devices is explored, with the data suggesting that smaller devices would exhibit both faster switching and higher small signal gains.