|Institution:||University of Cincinnati|
|Department:||Engineering : Computer Engineering|
|Keywords:||Electrical Engineering; fault behaviors; fault detection; gated ground; low power SRAM; power gating|
|Full text PDF:||http://rave.ohiolink.edu/etdc/view?acc_num=ucin1267192022|
In this research, a gated-Ground SRAM circuit has been implemented to study fault behaviors of single spot defects. All possible functional fault models of a single cell (FFM1s) and two adjacent cells (FFM2s) have been simulated under normal mode and sleep mode. Six new faults have been found. The new fault behaviors of a gated-Ground SRAM cell have been compared with those in a drowsy SRAM cell, and the commonality has been identified. Compared to traditional SRAM cells, both gated-Ground and drowsy SRAM cells are weak in data retention state, especially under sleep mode or drowsy mode if there exists any spot defect. A march test has been improved to cover both traditional static faults and gated-Ground faults, so that all single spot defects can be detected.