AbstractsComputer Science
Compact gate capacitance and gate current modeling of ultra-thin (EOT ~ 1 nm and below) SiO₂ and high-k gate dielectrics
| Institution: | University of Texas – Austin |
|---|---|
| Department: | Electrical and Computer Engineering |
| Degree: | PhD |
| Year: | 2008 |
| Keywords: | Dielectrics; Electrodes; Integrated circuits – Ultra large scale integration; Metal oxide semiconductors; Silicon oxide; Hafnium oxide |
| Record ID: | 1832624 |
| Full text PDF: | http://hdl.handle.net/2152/2565 |
Abstract
