AbstractsComputer Science

Compact gate capacitance and gate current modeling of ultra-thin (EOT ~ 1 nm and below) SiO₂ and high-k gate dielectrics

by Fei Li

Institution: University of Texas – Austin
Department: Electrical and Computer Engineering
Degree: PhD
Year: 2008
Keywords: Dielectrics; Electrodes; Integrated circuits – Ultra large scale integration; Metal oxide semiconductors; Silicon oxide; Hafnium oxide
Record ID: 1832624
Full text PDF: http://hdl.handle.net/2152/2565