AbstractsBusiness Management & Administration

Reactor design optimization based on computational modeling of the OMVPE process

by Yang Guo




Institution: Simon Fraser University
Department:
Year: 2006
Record ID: 1774384
Full text PDF: http://summit.sfu.ca/item/2996


Abstract

Organometallic vapor phase epitaxy (OMVPE) has been widely used to produce high quality thin films for semiconductor devices. In this thesis, fluid flow modeling approaches have been employed to investigate the OMVPE process in III/V compounds, and to optimize the growth conditions. Based on numerical simulations, a new showerhead reactor was designed to optimize growth rates and compositional uniformity. Numerical simulations of growth rate and growth rate uniformity were performed using fluid dynamics modeling codes, including the effects of gas phase diffusion. X-ray diffraction (XRD) analysis on InGaAs/GaAs samples grown in the new reactor chamber showed good agreement between experimental data and simulation results. It was demonstrated that very good growth and compositional uniformity, with non-uniformity as low as 1.2% and 0.5% respectively, can be achieved in our reactor even without high speed rotation. This may provide another approach for high quality thin film OMVPE growth in the future.