AbstractsEngineering
Study on Bias-temperature Instability in 4H-SiC Metal-oxide-semiconductor Devices
| Institution: | Osaka University |
|---|---|
| Department: | |
| Year: | 2014 |
| Record ID: | 1231469 |
| Full text PDF: | http://hdl.handle.net/11094/50528 |
Abstract
Study on Bias-temperature Instability in 4H-SiC Metal-oxide-semiconductor Devices
| Institution: | Osaka University |
|---|---|
| Department: | |
| Year: | 2014 |
| Record ID: | 1231469 |
| Full text PDF: | http://hdl.handle.net/11094/50528 |
