AbstractsEngineering

Surface Modification and Electrical Characterization of Porous Low k Thin Films for Nanoelectronics Applications;

by Mhaisagar Yogesh Suresh




Institution: North Maharashtra University
Department: International
Year: 2014
Keywords: Electrical Characterization, Porous Low-k Thin Films, Nanoelectronics
Record ID: 1209151
Full text PDF: http://shodhganga.inflibnet.ac.in/handle/10603/19452


Abstract

The advancement in fabrication processes results in revolution in newlinetechnology that helps in scaling the device size towards the nanoregime with newlineincrease in device speed and device density on single chip. But scaling of devices newlinein ultra large scale (ULSI) integrated circuits using conventional materials limits newlinespeed of the nanoelectrocnic device due to the properties of materials like newlineresistivity, mechanical strength etc. Thus, the conventional Al metal in newlineelectronicscircuits is replaced with Copper (Cu) in backend of line (BEOL) newlineapplication due to the low resistivity of Cu interconnect which minimizes the RC newlinedelay of interconnect. In addition to RC delay, the cross talk and power newlineconsumption in interconnect also needs to reduce in order to continued the newlineminiaturization of device dimension. Therefore to overcome the aforesaid newlineproblems it is needed to minimize the dielectric constant of insulator between newlineinterconnects used as interlayer dielectric (ILD) in ULSI circuits. As per the newlinerecent ITRS the dielectric constant for the 32 nm technology should be less than newline2.3. newlineThis chapter summarizes the introduction of semiconductor technology newlinealong with need of low-k thin films, different low-k materials and literature newlinesurvey. The motivation and formulation of problem is given in last section of this newlinechapter%%%