AbstractsPhysics

the doped al be li na k cs and er and codoped n mg and er films were newlinedeposited on glass and sapphire substrates by changing the doping and codoping newlineconcentration using spin and dip coating methods besides the different annealing newlinetemperatures and atmospheres nh3 n2 ar and h2 were used the structural electrical and newlineoptical properties of the deposited films were characterized by x ray diffraction xrd newlinescanning electron microscopy sem atomic force microscope afm micro raman hall newlineeffect vibrational sample magnetometer vsm photoluminescence pl and uv vis newlinespectroscopy all the doped and codoped zno films showed better polycrystalline nature newlineexhibiting hexagonal wurtzite structure the presence of dopants in the films was confirmed newlineby x ray photoelectron spectra xps and energy dispersive x ray edx spectra the effect newlineof doping and annealing atmosphere ar h2 used in li doped zno films shows p type newlinebehavior cs doped zno thin films also show p type conductivity with high crystalline newlinequality at higher annealing temperatures high mobility induced p type zno films are newlineobtained by al and n codoping the photoconductive properties of single cdzno mgzno newlineli cdzno mgzno and double mgzno zno mgzno cdzno zno mgzno newlineheterostructures have been constructed and probed in detail defect related and carrier newlinemediated ferromagnetism has been observed at highly li doped zno thin films newline newline%%%